Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof

ABSTRACT

Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/585,451, filed Aug. 14, 2012, which is a continuation of U.S.application Ser. No. 12/849,265, filed Aug. 3, 2010, now U.S. Pat. No.8,278,646, issued Oct. 2, 2012, which is a continuation of U.S.application Ser. No. 11/719,929, filed May 22, 2007, now U.S. Pat. No.7,791,062, issued Sep. 7, 2010, which is the U.S. national stageapplication of International Patent Application No. PCT/KR2005/004120,filed Dec. 5, 2005, which claims priority to Korean Patent ApplicationNo. 10-2004-0111087, filed Dec. 23, 2004, all of which are incorporatedherein by reference in their entirety.

BACKGROUND

1. Technical Field

The present invention is relative to a nitride semiconductor lightemitting device and fabrication method thereof, and to a nitridesemiconductor light emitting device and a fabrication method thereofthat can increase the optical power and enhance the reliability byincreasing a hole carrier concentration contributing to the electricconductivity in an electrode contact layer to increase the recombinationprobability of electrons and holes.

2. Background Art

A schematic stack structure of a general nitride semiconductor lightemitting device and a fabrication method thereof will now be described.

FIG. 1 is a sectional view of a general nitride semiconductor lightemitting device.

Referring to FIG. 1, a conventional nitride semiconductor light emittingdevice includes a substrate 101, a buffer layer 103, an n-GaN layer 105,an active layer 107 and a p-GaN layer 109. Herein, the substrate 101 canbe exemplified by a sapphire substrate.

A fabrication method of the nitride semiconductor light emitting devicewill now be described. In order to minimize the occurrence of crystaldefects due to differences in the lattice constants and the thermalexpansion coefficients of the substrate 101 and the n-GaN layer 105, aGaN-based nitride or an AlN-based nitride having an amorphous phase at alow temperature is formed as the buffer layer 103.

The n-GaN layer 105 doped with silicon at a doping concentration of10¹⁸/cm³ is formed at a high temperature as a first electrode contactlayer. Thereafter, the growth temperature is lowered and the activelayer 107 is formed. Thereafter, the growth temperature is againelevated and the p-GaN layer 109 doped with magnesium (Mg) and having athickness range of 0.1-0.5 μm is formed as a second electrode contactlayer. The nitride semiconductor light emitting device having theaforementioned stack structure is formed in a p-/n-junction structurewhich uses the n-GaN layer 105 as the first electrode contact layer anduses the p-GaN layer 109 as the second electrode contact layer.

Also, a second electrode material formed on the second electrode contactlayer is limited depending on a doping type of the second electrodecontact layer. For example, in order to decrease the contact resistancebetween the second contact material and the p-GaN layer 109 having ahigh resistance component and enhance the current spreading, a thintransmissive resistance material of a Ni/Au alloy is used as the secondelectrode material.

To form the p-GaN layer 109 used as the second electrode contact layer,the p-/n-junction light emitting device using the nitride semiconductoremploys a doping source of Cp₂Mg or DMZn. In the case of DMZn, since Znis in ‘deep energy level’ within the p-GaN layer 109 and has a very highactivation energy, the hole carrier concentration serving as a carrierwhen a bias is applied is limited to about 1×10¹⁷/cm³. Accordingly,Cp₂Mg MO (metal organic) having a low activation energy is used as thedoping source.

Also, when the Mg-doped p-GaN layer 109 having a thickness range of0.1-0.5 μm is grown using a doping source of Cp₂Mg at the same flow rateor by sequentially varying the flow rate of Cp₂Mg, hydrogen (H) gasseparated from the doping source and NH₃ carrier gas are combined toform an Mg-H complex, in the p-GaN layer 109, which shows a highresistance insulation characteristic of more than ˜10⁶Ω. Accordingly, inorder to emit light during the recombination process of holes andelectrons in the active layer 107, an activation process is essentiallyrequired to break the bond of Mg-H complex. Since the Mg-doped p-GaNlayer 109 has a high resistance, it cannot be used without any change.The activation process is performed through an annealing process at atemperature range of 600° C.-800° C. in an ambient of N₂, N₂/O₂.However, since Mg existing in the p-GaN layer 109 has a low activationefficiency, it has a relatively high resistance value compared with then-GaN layer 105 used as the first electrode contact layer. In realcircumstance, after the activation process, the atomic concentration ofMg in the p-GaN layer 109 is in a range of 10¹⁹/cm³-10²⁰/cm³, and thehole carrier concentration contributing to a pure carrier conductivityis in a range of 10¹⁷/cm³-10¹⁸/cm³, which correspond to a difference ofmaximum 10³ times. It is also reported that the hole mobility is 10cm²/vsec, which is a very low value. FIG. 2 is a schematic view showinga sectional structure of the conventional Mg-doped p-GaN layer and an Mgprofile inside the Mg-doped p-GaN layer after the activation process isperformed. Referring to FIG. 2, it can be seen that the Mg atomicconcentration and the hole carrier concentration show a difference ofmaximum 10³ times.

Meanwhile, the Mg atomic concentration remaining in the p-GaN layer 109without a complete activation causes many problems. For example, lightemitting from the active layer toward the surface is trapped to lowerthe optical power, or when a high current is applied, heat is generateddue to a relatively high resistance value, so that the life time of thelight emitting device is shortened to have a fatal influence on thereliability. Especially, in the case of a large size/high power 1 mm×1mm light emitting device using a flip chip technique, since a current of350 mA which is very higher than a conventional current of 20 mA isapplied, a junction temperature of more than 100° C. is generated at ajunction face, having a fatal influence on the device reliability andcausing a limitation to product application in future. The generatedmuch heat is caused by an increase of resistance component due to the Mgatomic concentration remaining in the p-GaN layer 109 used as the secondelectrode contact layer without being activated as a carrier, and arough surface property due to the increase of the resistance component.

Also, in the general p-/n-junction light emitting device, the n-GaNlayer 105 used as the first electrode contact layer can easily controlthe hole concentration within 5-6×10¹⁸/cm³ within a critical thicknessensuring the crystallinity in proportional to the silicon dopingconcentration depending on an increase in the flow rate of SiH₄ orSi₂H₆, whilst in the p-GaN layer 109 used as the second electrodecontact layer, the hole concentration substantially serving as carriersis limited within a range of 1-9×10¹⁷/cm³ although the flow rate ofCp₂Mg is increased and Mg atoms of more than maximum ˜10²⁰/cm³ aredoped. To this end, the conventional light emitting device is made in ap-/n-junction structure having an asymmetric doping profile.

As aforementioned, the low carrier concentration and high resistancecomponent of the p-GaN layer 109 used as the second electrode contactlayer cause the light emitting efficiency to be decreased.

To solve the above problem, a conventional method for increasing theoptical power by employing Ni/Au TM (transparent thin metal) having agood transmission and a low contact resistance has been proposed.However, the conventional method badly influences the device reliabilitywhen being applied to a large size/high power light emitting device.This problem still remains unsettled in the light emitting devices usingthe GaN semiconductor.

BRIEF SUMMARY Technical Problem

The present invention provides a nitride semiconductor light emittingdevice and fabrication method thereof that can enhance the property ofp-GaN layer constituting the nitride semiconductor light emittingdevice.

Also, the present invention provides a nitride semiconductor lightemitting device and fabrication method thereof that can enhance theoptical power and reliability.

In addition, the present invention provides a nitride semiconductorlight emitting device and fabrication method thereof that can overcomethe problems caused by the low hole carrier concentration and mobilityof the Mg-doped p-GaN layer used as the second electrode contact layerand a high resistance component of Mg atomic concentration (includingMg—H complex) remaining completely inactivated in the p-GaN layer, andenhance the optical power and reliability.

Technical Solution

There is provided a nitride semiconductor light emitting deviceincluding: a first nitride semiconductor layer; an active layer formedabove the first nitride semiconductor layer; and a delta doped secondnitride semiconductor layer formed above the active layer.

In another aspect of the present invention, there is provided a nitridesemiconductor light emitting device including: a buffer layer; a firstnitride semiconductor layer formed above the buffer layer; a firstelectrode contact layer formed above the first nitride semiconductorlayer; an active layer formed above the first nitride semiconductorlayer in a single quantum well structure or a multi quantum wellstructure comprised of a well layer and a barrier layer; and a deltadoped second nitride semiconductor layer formed above the active layer.

In another aspect of the present invention, there is provided a methodof fabricating a nitride semiconductor light emitting device, the methodincluding: forming a buffer layer above a substrate; forming a firstnitride semiconductor layer above the buffer layer; forming an activelayer above the first nitride semiconductor layer; and forming a deltadoped second nitride semiconductor layer above the active layer.

Advantageous Effects

According to the present invention, the characteristic of the p-GaNlayer constituting the nitride semiconductor light emitting device isenhanced, the optical power of the nitride semiconductor light emittingdevice is enhanced, the optical power down phenomenon is improved, andthe reliability against ESD (Electro Static Discharge) is enhanced.

DESCRIPTION OF DRAWINGS

The spirit of the present invention will be understood more apparentlyfrom the accompanying drawings. In the drawings:

FIG. 1 is a schematic view showing a stack structure of a generalnitride semiconductor light emitting device;

FIG. 2 is a schematic view showing a sectional structure of theconventional Mg-doped p-GaN layer and an Mg profile inside the Mg-dopedp-GaN layer after the activation process is performed;

FIG. 3 is a schematic view illustrating a Cp₂Mg delta doping flow rateaccording to a growth time;

FIG. 4 is a graph showing an Mg doping profile before and after asubsequent activation process after a crystal growth for a Cp₂Mg deltadoped p-GaN is completed;

FIG. 5 is a graph showing an electric field profile after a subsequentactivation process of a Cp₂Mg delta doped p-GaN layer is completed;

FIG. 6 is a schematic view showing a stack structure of a nitridesemiconductor light emitting device according to a first embodiment ofthe present invention; and

FIG. 7 is a schematic view showing a stack structure of a nitridesemiconductor light emitting device according to a second embodiment ofthe present invention.

DETAILED DESCRIPTION Best Mode

Hereinafter, an embodiment according to the spirit of the presentinvention will be described with reference to the accompanying drawings.

The present invention is characterized in that in the fabrication methodof a nitride semiconductor, a Cp₂Mg delta doping process is performed togrow a p-GaN layer, and the Cp₂Mg delta doping process will be describedwith reference to FIGS. 3 to 5.

FIG. 3 is a schematic view illustrating a Cp₂Mg delta doping flow rateaccording to a growth time.

Referring to FIG. 3, after an active layer emitting light is grown, anundoped GaN layer of less than 200 Å is grown so as to protect a “V” pitdefect formed during the growth of the active layer, and the flow rateof Cp₂Mg is adjusted from 0 cc to 1000 cc within a thickness range of10-200 Å to form a delta doped GaN layer. FIG. 3 shows an Mg-delta dopedGaN grown by consecutively repeating one period consisting of undopedGaN layer/delta doped GaN layer. In the above crystal growth method,only the flow rate of Cp₂Mg is changed, the growth temperature is fixedto 1000° C. and the other conditions are fixed so as to maintain thecrystallinity.

In growing the Mg-delta doped GaN layer, the thickness of each of theundoped GaN layer and the delta doped GaN layer constituting one periodmay be varied. Also, in repeatedly growing one period of undoped GaNlayer/delta doped GaN layer, the dose at each period may be varied. Atthis time, an overall thickness of the two layers forming one period canbe adjusted within a thickness range of 10-300 Å.

FIG. 4 is a graph showing an Mg doping profile before and after asubsequent activation process after a crystal growth for a Cp₂Mg deltadoped p-GaN is completed.

Referring to FIG. 4, when Cp₂Mg delta doping of the same amount isrepeated at a constant period before the subsequent activation process,the delta doped GaN layer having a sharp Mg doping profile can beobtained at a boundary between the undoped GaN layers. Thereafter, whilethe subsequent activation process is performed, Mg is diffused into theundoped GaN layers of both sides, so that a wide Mg doping profile isobtained. Through the above subsequent activation process, the p-GaNlayer has a uniform Mg doping profile in whole.

In general, when a forward bias is applied to the undoped GaN layer, itcan be seen that the operating voltage increases. In the presentinvention, the operating voltage can be effectively lowered to less than3.5 V (20 mA) to increase the optical power of the light emitting deviceby controlling the thickness of the Cp₂Mg delta doped p-GaN layer andthe thickness of the undoped GaN layer.

FIG. 5 is a graph showing an electric field profile after a subsequentactivation process of a Cp₂Mg delta doped p-GaN layer is completed.

Referring to FIG. 5, it can be seen that the hole carrier concentrationprofile is relatively high in the Cp₂Mg delta doped regions periodicallyrepeated. Therefore, in the Cp₂Mg delta doped regions, potentialincreases to form an electric field doping. Accordingly, like in an HEMTstructure 2 DEG (two dimensional electronic well layer) that is a highspeed switching device using an energy bandgap difference (AlGaN/GaNjunction), potential well can be formed to uniformly and effectivelycontrol the flow of holes likewise to effectively control atwo-dimensional flow of electrons. In conclusion, it can be seen thathole injection efficiency is increased by the potential well.

As can be seen from the above description, the p-GaN layer grown by theconventional art has a problem that when a forward bias is applied, ahigh resistance component thereof sharply decreases current flow ininverse proportion with a distance from an electrode contact surface toan upper surface thereof, whilst in the present invention, the potentialwell layer can more effectively increase the current density to enhancethe optical power of the light emitting device.

Also, by the Cp₂Mg delta doping, since the doping element is uniformly,repeatedly and periodically doped at a relatively very small amount andthen the activation process for the p-GaN layer is optimized andperformed, the atomic concentration of Mg, Mg—H complex and the likeexisting therein can be decreased to suppress the resistance componentas much as possible. In other words, the present invention increases thehole carrier concentration purely contributing to the electricconductivity to thereby increase the recombination probability withelectrons and in the long run effectively increase the optical power.Thus, the present invention provides a high level crystal growthtechnique that can decrease the resistance component to enhance thereliability of the light emitting device.

Hereinafter, a concrete embodiment of the nitride semiconductor lightemitting device according to the present invention will be described.

FIG. 6 is a schematic view showing a stack structure of a nitridesemiconductor light emitting device according to a first embodiment ofthe present invention.

Referring to FIG. 6, the nitride semiconductor light emitting deviceaccording to the present embodiment includes a substrate 401, a bufferlayer 403, an In-doped GaN layer 405, an n-GaN layer 407, a low-moleIn-doped GaN layer or low-mole InGaN layer 409, an active layer 411, andan Mg-delta doped p-GaN layer 413. The Mg-delta doped p-GaN layer 413has been described in detail with reference to FIGS. 3 to 5.

Hereinafter, a fabrication method of the nitride semiconductor lightemitting device according to a first embodiment will be described inmore detail.

First, in the present embodiment, only H₂ carrier gas is supplied ontothe sapphire substrate 401 at a high temperature to clean the sapphiresubstrate 401. Thereafter, in step of decreasing the growth temperatureto 540° C., NH₃ source gas is supplied to perform a nitridation of thesapphire substrate 401, for example for 7 minutes.

Thereafter, the buffer layer 403 having a 1^(st) AlInN/1 ^(st)GaN/2^(nd) AlInN/2^(nd) GaN structure is grown to a thickness of about500 Å. Herein, the buffer layer 403 can be formed in a structureselected from the group consisting of a stack structure of AlInN/GaN, asuper lattice structure of InGaN/GaN, a stack structure ofIn_(x)Ga_(1−x)N/GaN, and a stack structure ofAl_(x)In_(y)Ga_(1−(x+y))N/In_(x)Ga_(1−x)N/GaN. Then, the growthtemperature is increased up to 1060° C. for 6 minutes, the lowtemperature buffer layer 403 is recrystallized in a mixture ambient ofNH₃ source gas and H₂ carrier gas for 2 minutes, and at the same growthtemperature, the indium-doped GaN layer 405 having about 2 μm thicknessis grown in a single crystal. Thereafter, the growth temperature isdecreased to 1050° C., and the n-GaN layer 407 co-doped with silicon andindium at the same growth temperature is grown to a thickness of 2 μm.The n-GaN layer 407 is used as the first electrode layer.

Also, to adjust the strain of the active layer 411, the low-moleIn-doped GaN layer or low-mole InGaN layer 409 having 5% indium content(wavelength: 480 nm) is grown to a thickness of 300 Å at 750° C. Theindium content can be adjusted in a range of 1-5%. The low-mole In-dopedGaN layer or low-mole InGaN layer 409 is intentionally controlled in‘spiral growth mode’ having a uniform profile. Herein, in the low-moleIn-doped GaN layer or low-mole InGaN layer 409, as the ‘spiral density’intentionally controlled increases, the area of the active layer 411increases. Accordingly, the low-mole In-doped GaN layer or low-moleInGaN layer 409 can perform a role that can increase the light emittingefficiency.

Thereafter, at the same growth temperature, the active layer 411 havinga single quantum well (SQW) of undoped InGaN/InGaN structure is grown.In the grown active layer 411, the barrier layer has an indium contentof less than 5% and a thickness of about 250 Å. At this time, the activelayer 411 can be formed in the multi quantum well layer.

Thereafter, the growth temperature is again increased to 1000° C., anoverall thickness is fixed to 0.1 μm, the flow rate of TMGa is alsofixed, and only the flow rate of Cp₂Mg is switched on/off from 0 cc to1000 cc to thereby perform the delta doping process. In order toeffectively perform the Cp₂Mg delta doping, after the active layer 411emitting light is grown, the undoped GaN layer is first grown in athickness range of 10-200 Å to completely protect the active layer 411such that Mg atoms are not internally diffused into the “V” pit crystalformed on a surface of the active layer 411, and then the Cp₂Mg deltadoping process is performed in a thickness range of 10-200 Å. The Cp₂Mgdelta doping process sets the undoped GaN/delta doped GaN structure asone period and continuously repeats the one period within an overallthickness of 0.1 μm to form a light emitting device having ap-/n-junction structure such that resistance component is decreased byMg atomic concentration (including Mg atomic and Mg—H complex) after theactivation and uniform carrier concentration is obtained.

After the nitride semiconductor light emitting device is completed bythe aforementioned processes, mesa etching is performed using an ICPetching apparatus and the nitride semiconductor light emitting device ismade in a size of 330 μm×205 μm. Electrical property variation of thefabricated nitride semiconductor light emitting device is analyzed andinvestigated to verify its performance. As a result, the operatingvoltage (20 mA) in a forward bias is below 3.4 V, which is the samevalue as that of the conventional art, but the optical power isincreased by 50-100%.

Why the optical power is increased is that an inner diffusion into the“V” pit defect formed in the surface of the active layer emitting lightis suppressed, and an absolute amount of Mg atomic (including Mg—Hcomplex) remaining in the layer after the subsequent activation processis decreased by an Mg doping profile lower than that of the conventionalart, but the hole carrier concentration contributing to the electricconductivity is increased.

FIG. 7 shows a nitride semiconductor light emitting device according toa second embodiment of the present invention.

Referring to FIG. 7, the nitride semiconductor light emitting deviceaccording to a second embodiment of the present invention includes asubstrate 401, a buffer layer 403, an In-doped GaN layer 405, an n-GaNlayer 407, a low-mole In-doped GaN layer or low-mole InGaN layer 409, anactive layer 411, an Mg-delta doped p-GaN layer 413, and an n-InGaNlayer 515.

Compared with the first embodiment, the above second embodiment has adifference in that the nitride semiconductor light emitting devicefurther includes the n-InGaN layer 515. Therefore, only the n-InGaNlayer 515 will be additively described and descriptions of otherelements will be referred from that of the first embodiment.

To fabricate an n-/p-/n-junction structure light emitting device, inaddition to the p-/n-junction structure light emitting device, thesecond embodiment of the present invention grows the Mg-delta dopedp-GaN layer 413 and then grows the n-InGaN layer 515 to use as thesecond electrode contact layer.

The n-InGaN layer 515 used as the second electrode contact layer isgrown to a thickness of 50 Å with being doped with silicon at a growthtemperature decreased to 800° C. in a mixture gas ambient of NH₃ sourcegas and N₂ carrier gas. At this time, the n-InGaN layer 515 is used asthe second electrode contact layer and is designed to have the supergrading (SG) structure in which indium content is adjusted to controlthe energy bandgap profile on whole. By the aforementioned method, then-/p-/n-junction structure nitride semiconductor light emitting devicecan be obtained.

MODE FOR INVENTION

In addition to the above embodiments, a plurality of other examples canbe provided on the basis of the same spirit.

First, a transparent electrode may be further formed on the n-InGaNlayer 515. The transparent electrode can be formed of one selected fromthe group consisting of ITO, IZO(In—ZnO), GZO(Ga—ZnO), AZO(Al—ZnO),AGZO(Al—Ga ZnO), IGZO(In—Ga ZnO), IrO_(x), RuO_(x), RuO_(x)/ITO,Ni/IrO_(x)/Au, and Ni/IrO_(x)/Au/ITO.

Also, while the second embodiment illustrates that the n-InGaN layer 515is formed as the second electrode contact layer, an n-InGaN/InGaN superlattice structure may be formed as the second electrode contact layer.Alternatively, a Si-doped GaN layer may be further formed between then-InGaN/InGaN super lattice layer and the Mg-delta doped p-GaN layer413.

In addition, the first and second embodiments illustrate that Mg isdelta doped in the delta doping process. However, through a similarprocess, Mg—Al, Mg—Al—In or the like as well as Mg can be delta doped.At this time, TMAl, TMIn MO (metal organic) can be used as a dopingsource.

Further, the delta doped p-GaN layer can be formed with one periodconsisting of undoped AlGaN/delta doped p-GaN structure, the two layersconstituting the one period can be repeatedly grown at least two times,the undoped AlGaN layer is grown within a thickness range of 10-300 Åwith an Al composition range of 0.01-0.02.

Furthermore, the delta doped p-GaN layer can be formed with one periodconsisting of undoped InGaN/delta doped p-GaN structure, the two layersconstituting the one period can be repeatedly grown at least two times,the undoped InGaN layer is grown within a thickness range of 10-300 Åwith an Al composition range of 0.01-0.1.

Also, the delta doped p-GaN layer can be formed with one periodconsisting of undoped GaN/undoped AlGaN cap/delta doped p-GaN structure,the three layers constituting the one period can be repeatedly grown atleast two times, the undoped AlGaN cap layer is grown within a thicknessrange of 5-200 Å with an Al composition range of 0.01-0.02.

Additionally, the delta doped p-GaN layer can be formed with one periodconsisting of undoped InGaN/undoped AlGaN cap/delta doped p-GaNstructure, the three layers constituting the one period can berepeatedly grown at least two times, the undoped AlGaN cap layer isgrown within a thickness range of 5-200 Å with an Al composition rangeof 0.01-0.02.

Also, in the first and second embodiments, the n-GaN layer serving asthe first electrode contact layer can be an n-GaN layer formed by aco-doping of Si and In, and it can be formed at a doping concentrationof 1-9×10¹⁹/cm³ in a thickness range of 1-4 μm.

Additionally, the first electrode contact layer can be formed with oneperiod consisting of undoped-AlGaN/doped-GaN super lattice structure,the two layers constituting the one period can be repeatedly grown atleast two times with an overall thickness of 1-2 μm and an Alcomposition of 0.05-0.3. The doped-GaN layer can be formed within athickness range of 200-500 Å.

Further, the active layer can be made in a single quantum well structureor a multi quantum well structure comprised of well layer/SiNx clusterlayer/barrier layer, and the SiNx cluster layer can be grown by aSi-delta doping method. The SiNx cluster layer can be grown by theSi-delta doping using a doping source of SiH₄ or SiH₆ alone.

INDUSTRIAL APPLICABILITY

According to the nitride semiconductor light emitting device andfabrication method thereof provided by the present invention, theoptical power is enhanced, the power down phenomenon is improved, andthe reliability against ESD (Electro Static Discharge) is enhanced.

Also, the present invention can be applied to a lighting apparatusrequiring high optical power and high reliability.

What is claimed is:
 1. A light emitting device comprising: a firstconductive type semiconductor layer; an active layer on the firstconductive type semiconductor layer; and a second conductive typesemiconductor layer on the active layer, wherein the second conductivetype semiconductor layer includes a p-type dopant, wherein the secondconductive type semiconductor layer has a doping profile comprising aplurality of peaks, wherein the second conductive type semiconductorlayer comprises a periodic structure, and wherein a period of theperiodic structure comprises a p-type GaN layer and a p-type AlGaNlayer.
 2. The light emitting device according to claim 1, wherein theplurality of peaks are formed in the p-type GaN layer.
 3. The lightemitting device according to claim 1, wherein the p-type AlGaN layer isin a range of 5 Å-200 Å.
 4. The light emitting device according to claim1, wherein the active layer includes a InGaN well layer and an InGaNbarrier layer
 5. The light emitting device according to claim 1, whereinthe first conductive type semiconductor layer includes a super latticestructure having at least two layers.
 6. The light emitting deviceaccording to claim 1, wherein the p-type dopant of the p-type GaN layeris more heavily doped than p-type dopant of the p-type AlGaN layer. 7.The light emitting device according to claim 1, wherein the p-type AlGaNis disposed between the active layer and the p-type GaN layer.
 8. Thelight emitting device according to claim 1, wherein in the dopingprofile, a concentration of the p-type dopant non-linearly decreasesfrom a center of a thickness of the p-type AlGaN layer to a center of athickness of the p-type GaN layer.
 9. The light emitting deviceaccording to claim 1, wherein the p-type AlGaN layer includes oneselected from the group of consisting of Mg, Mg—Al or Mg—Al—In.
 10. Thelight emitting device according to claim 1, wherein the first conductivetype semiconductor layer is formed by growing repeatedly at least twotimes an undoped-AlGaN/doped-GaN super lattice structure.
 11. A lightemitting device comprising: a first conductive type semiconductor layer;an active layer on the first conductive type semiconductor layer; and asecond conductive type semiconductor layer including a p-type dopant onthe active layer, wherein the second conductive type semiconductor layercomprises a doping profile having a plurality of peaks, wherein thesecond conductive type semiconductor layer comprises a first p-typesemiconductor layer and a second p-type semiconductor layer, and whereinthe plurality of peaks are formed in the second p-type semiconductorlayer.
 12. The light emitting device according to claim 11, wherein thefirst conductive type semiconductor layer includes a super latticestructure having at least two layers.
 13. The light emitting deviceaccording to claim 11, wherein the first conductive type semiconductorlayer has an overall thickness of less than 2 μm.
 14. The light emittingdevice according to claim 11, wherein the first conductive typesemiconductor layer is an n-GaN layer formed by a Si—In simultaneousdoping in a doping concentration range of 1×10¹⁹/cm³-9×10¹⁹/cm³.
 15. Thelight emitting device according to claim 11, wherein the firstconductive type semiconductor layer is formed by growing repeatedly atleast two times an undoped-AlGaN/doped-GaN super lattice structure. 16.The light emitting device according to claim 11, wherein the firstp-type semiconductor layer comprises at least one of GaN, AlGaN orInGaN.
 17. The light emitting device according to claim 11, wherein thefirst p-type semiconductor layer is in a range of 10 Å-300 Å.
 18. Thelight emitting device according to claim 11, wherein in the dopingprofile, a concentration of the p-type dopant non-linearly decreasesfrom a center of a thickness of the first p-type semiconductor layer toa center of a thickness of the second p-type semiconductor layer. 19.The light emitting device according to claim 11, wherein the secondp-type semiconductor layer includes at least one selected from the groupof consisting of Mg, Mg—Al or Mg—Al—In.
 20. The light emitting deviceaccording to claim 11, wherein the second p-type semiconductor layerincludes GaN.